Carnegie Mellon builds molybdenum-disulfide transistors with channels below 5 nanometres
Carnegie Mellon University announced research on 15 October into transistors made from the two-dimensional semiconductor molybdenum disulfide. The Nature Communications study built devices with physical channel lengths below 5 nanometres and, according to the university, switching performance beyond silicon’s theoretical limit at a comparable size.
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An air gap beneath the channel helps the gate control current and reduce leakage. The team fabricated transistors across a four-inch wafer. This is a research demonstration: the technology is not yet ready for commercialisation and has not replaced silicon in mass production.
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Semiconductor research
MoS₂ device demonstration
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Semiconductor research
MoS₂ device demonstration
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Records the university announcement date; experiment day unspecified. Research is not classified as commercial production or chip shipments.
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