Navitas unveils 2300 V, 8 mΩ SiC power module family
The new full-bridge module was announced for grid and energy-storage applications.
Event / data period: 2026-10-21
Published: · Updated:
Navitas Semiconductor announced on 21 October a 2300-volt full-bridge silicon-carbide (SiC) power module family, part number G4H08MT23GB4. The company reports an on-resistance of 8 milliohms.
The module family is intended for solid-state transformers, grid-scale battery storage, solar inverters and megawatt EV charging. The release describes product specifications and target applications; it does not report measured field efficiency gains.
Data
Module on-resistance
- · Occurred
Product family announced
Navitas introduced the G4H08MT23GB4 2300 V full-bridge SiC module with a company-reported 8 mΩ on-resistance. This is a product specification, not a system-efficiency measurement.
Methodology
Specifications are taken from the company announcement dated 21 October; this is a product announcement for a technology under development.
Updated:
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