UC San Diego team shows how current shapes memory in neuristors
UC San Diego researchers tracked nanoscale domain rearrangement in electrically operated vanadium-dioxide neuristors using operando coherent X-ray diffraction. Their findings show that current can change how the device learns and forgets a previous state.
Event / data period: 2026-09-24
Published: · Updated:
UC San Diego researchers tracked nanoscale domain rearrangement in electrically operated vanadium-dioxide neuristors using operando coherent X-ray diffraction. Their findings show that current can change how the device learns and forgets a previous state.
The team examined the transition from a liquid-like mobile state to a jammed or glass-like state. According to the university, jamming the flow enables learning, while restoring free flow erases memory. This control offers an approach for research into brain-inspired computing hardware.
UC San Diego says the study appeared in Nature Communications on September 24, 2026; the university report followed on October 13. The result is a laboratory demonstration in materials physics, not an energy-consumption measurement or an already available commercial neuromorphic product.
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UC San Diego team shows how current shapes memory in neuristors
The event date is the September 24 publication date stated by the source. UC San Diego’s October 13 report describes the method and finding; the study did not measure commercial product performance.
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UC San Diego team shows how current shapes memory in neuristors
The event date is the September 24 publication date stated by the source. UC San Diego’s October 13 report describes the method and finding; the study did not measure commercial product performance.
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