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Voltage switches magnetic states in four-layer graphene

A Cornell team reported a persistent, reversible voltage-driven magnetic-state change in four-layer graphene.

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Cornell researchers used voltage to shift the atomic stacking in four-layer graphene, switching it between the nonmagnetic Bernal arrangement and a rhombohedral arrangement associated with magnetism. The study was published in Nature Nanotechnology on October 14.

The team reported that the change persisted after the voltage was removed and could be reversed. The approach offers a research route toward reconfigurable quantum materials and nonvolatile memory; the study does not demonstrate a commercial memory device or a switch for superconductivity.

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A Cornell team reported a persistent, reversible voltage-driven magnetic-state change in four-layer graphene.

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    Voltage switches magnetic states in four-layer graphene

    A Cornell team reported a persistent, reversible voltage-driven magnetic-state change in four-layer graphene.

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